 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| VISHAY TLHE / G / K / P510. Vishay Semiconductors High Intensity LED, 5 mm Untinted Non-Diffused Description The TLH.51.. series is a clear, non diffused 5 mm LED for outdoor application. These clear lamps utilize the highly developed technologies like AlInGaP and GaP. The lens and the viewing angle is optimized to achieve best performance of light output and visibility. The subtypes TLH.5101 and TLH.5102 with their very stable light output are especially recommended for applications where a homogeneous appearance is required. 19223 e2 Pb Pb-free Features * Untinted non diffused lens * Choice of four colors * TLH.5101 and TLH.5102 with reduced light matching factor * TLH.5100 for cost effective design * Medium viewing angle * Lead-free device Applications Outdoor LED panels Central high mounted stop lights (CHMSL) for motor vehicles Instrumentation and front panel indicators Light guide design Traffic signals Parts Table Part TLHK5100 TLHE5100 TLHG5100 TLHG5101 TLHG5102 TLHP5100 TLHP5101 TLHP5102 Color, Luminous Intensity Red, IV > 320 mcd Yellow, IV > 750 mcd Green, IV > 240 mcd Green, IV > 240 mcd Green, IV > 240 mcd Pure green, IV > 66 mcd Pure green, IV > 66 mcd Pure green, IV > 66 mcd Angle of Half Intensity () 9 9 9 9 9 9 9 9 Technology AllnGaP on GaAs AllnGaP on GaAs GaP on GaP GaP on GaP GaP on GaP GaP on GaP GaP on GaP GaP on GaP Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified TLHK51.. , TLHE51.. , TLHG51.. , TLHP51.. Parameter Reverse voltage DC Forward current Surge forward current Power dissipation Junction temperature Tamb 65 C tp 10 s Tamb 65 C Test condition Symbol VR IF IFSM PV Tj Value 6 30 1 100 100 Unit V mA A mW C Document Number 83010 Rev. 1.9, 31-Aug-04 www.vishay.com 1 TLHE / G / K / P510. Vishay Semiconductors Parameter Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient t 5 s, 2 mm from body Test condition Symbol Tamb Tstg Tsd RthJA Value - 40 to + 100 - 55 to + 100 260 350 VISHAY Unit C C C K/W Optical and Electrical Characteristics Tamb = 25 C, unless otherwise specified Red TLHK51.. Parameter Luminous intensity 1) Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance 1) Test condition IF = 20 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 A VR = 0, f = 1 MHz Part TLHK5100 Symbol IV d p VF VR Cj Min 320 626 Typ. 630 643 9 1.9 Max 639 Unit mcd nm nm deg 2.6 V V pF 5 15 in one Packing Unit IVmin/IVmax 0.5 Yellow TLHE51.. Parameter Luminous intensity 1) Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance 1) Test condition IF = 20 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 A VR = 0, f = 1 MHz Part TLHE5100 Symbol IV d p VF VR Cj Min 750 581 Typ. 588 590 9 2 Max 594 Unit mcd nm nm deg 2.6 V V pF 5 15 in one Packing Unit IVmin/IVmax 0.5 www.vishay.com 2 Document Number 83010 Rev. 1.9, 31-Aug-04 VISHAY Green TLHG51.. Parameter Luminous intensity 1) TLHE / G / K / P510. Vishay Semiconductors Test condition IF = 20 mA Part TLHG5100 TLHG5101 TLHG5102 Symbol IV IV IV d p VF VR Cj Min 240 240 240 562 Typ. Max 480 640 575 Unit mcd mcd mcd nm nm deg Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance 1) IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 A VR = 0, f = 1 MHz 565 9 2.4 6 15 50 3 V V pF in one Packing Unit IVmin/IVmax 0.5 Pure green TLHP51.. Parameter Luminous intensity 1) Test condition IF = 20 mA Part TLHP5100 TLHP5101 TLHP5102 Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance 1) Symbol IV IV IV d p VF VR Cj Min 66 66 66 555 Typ. Max 132 200 565 Unit mcd mcd mcd nm nm deg IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 A VR = 0, f = 1 MHz 555 9 2.4 6 15 50 3 V V pF in one Packing Unit IVmin/IVmax 0.5 Typical Characteristics (Tamb = 25 C unless otherwise specified) 125 PV - Power Dissipation ( mW ) 60 I F - Forward Current ( mA ) 100 75 50 25 0 0 20 40 60 80 100 50 40 30 20 10 0 0 20 40 60 80 100 95 10918 Tamb - Ambient Temperature ( C ) 95 10046 Tamb - Ambient Temperature ( C ) Figure 1. Power Dissipation vs. Ambient Temperature Figure 2. Forward Current vs. Ambient Temperature Document Number 83010 Rev. 1.9, 31-Aug-04 www.vishay.com 3 TLHE / G / K / P510. Vishay Semiconductors 10000 I V rel - Relative Luminous Intensity VISHAY Tamb 85 C IF - Forward Current ( mA ) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 95 10880r Red I F = 10 mA 1000 t p /T = 0.01 0.02 0.05 0.1 100 1 10 0.5 0.2 1 0.01 95 10025 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C ) tp - Pulse Length ( ms ) Figure 3. Forward Current vs. Pulse Length Figure 6. Rel. Luminous Intensity vs. Ambient Temperature 0 Srel - Relative Sensitivity 10 20 30 I Vrel - Specific Luminous Intensity 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 Red 1.0 0.9 0.8 0.7 40 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6 10 I F -Forward Current ( mA ) 100 94 8351 96 11589r Figure 4. Relative Radiant Sensitivity vs. Angular Displacement Figure 7. Specific Luminous Intensity vs. Forward Current Red I F - Forward Current ( mA ) I Vrel - Relative Luminous Intensity 100 10 Red 1 10 0.1 1 1 95 10878r 0.01 1.5 2.0 2.5 3 96 11588r 1 10 I F - Forward Current ( mA ) 100 V F - Forward Voltage ( V ) Figure 5. Forward Current vs. Forward Voltage Figure 8. Relative Luminous Intensity vs. Forward Current www.vishay.com 4 Document Number 83010 Rev. 1.9, 31-Aug-04 VISHAY TLHE / G / K / P510. Vishay Semiconductors 1.2 1.1 Red IF = 10 mA 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 600 610 620 630 640 650 660 670 680 690 700 - Wavelength ( nm ) 10.00 I Vrel- Relative Luminous Intensity IVrel- Relative Luminous Intensity Yellow 1.00 0.10 0.01 1 96 11588y 10 IF - Forward Current ( mA ) 100 96 12075r Figure 9. Relative Intensity vs. Wavelength Figure 12. Relative Luminous Intensity vs. Forward Current 1.6 I V rel - Relative Luminous Intensity 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 Yellow IF = 10 mA I rel - Relative Intensity 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C ) 1.2 1.1 Yellow 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 550 560 570 580 590 600 610 620 630 640 650 l - Wavelength ( nm ) 95 10880y 95 10881y Figure 10. Rel. Luminous Intensity vs. Ambient Temperature Figure 13. Relative Intensity vs. Wavelength 1000 I Vrel - Specific Luminous Intensity 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 I F - Forward Current ( mA ) Yellow Green 100 t p /T = 0.001 t p = 10 s 10 1 0.1 10 I F - Forward Current ( mA ) 100 95 10034 0 2 4 6 8 10 96 11589y V F - Forward Voltage ( V ) Figure 11. Specific Luminous Intensity vs. Forward Current Figure 14. Forward Current vs. Forward Voltage Document Number 83010 Rev. 1.9, 31-Aug-04 www.vishay.com 5 TLHE / G / K / P510. Vishay Semiconductors 1.6 1.2 IVrel - Relative Luminous Intensity VISHAY I v rel - Relative Luminous Intensity Green 1.0 0.8 0.6 0.4 0.2 0 520 Green 1.2 0.8 0.4 I F = 10 mA 0 95 10035 0 20 40 60 80 100 540 560 580 600 620 T amb - Ambient Temperature ( C ) 95 10038 - Wavelength ( nm ) - Figure 15. Rel. Luminous Intensity vs. Ambient Temperature Figure 18. Relative Intensity vs. Wavelength 2.4 I v rel - Specific Luminous Intensity I F - Forward Current ( mA ) 100 Green Pure Green 2.0 1.6 1.2 0.8 0.4 0 10 1 95 10263 10 1 20 0.5 50 0.2 100 0.1 200 0.05 500 IF(mA) 0.02 tp/T 0.1 0 95 9988 1 2 3 4 5 V F - Forward Voltage ( V ) Figure 16. Specific Luminous Intensity vs. Forward Current Figure 19. Forward Current vs. Forward Voltage I v rel - Relative Luminous Intensity 10 Green 1 I Vrel - Relative Luminous Intensity 2.0 Pure Green 1.6 1.2 0.8 0.4 0 1 10 I F - Forward Current ( mA ) 100 95 9991 0.1 0 20 40 60 80 100 95 10037 Tamb - Ambient Temperature ( C ) Figure 17. Relative Luminous Intensity vs. Forward Current Figure 20. Rel. Luminous Intensity vs. Ambient Temperature www.vishay.com 6 Document Number 83010 Rev. 1.9, 31-Aug-04 VISHAY TLHE / G / K / P510. Vishay Semiconductors 2.4 Pure Green I Spec - Specific Luninous Flux 2.0 1.6 1.2 0.8 0.4 0 10 100 I F - Forward Current ( mA ) 1000 95 10261 Figure 21. Specific Luminous Intensity vs. Forward Current 10 I Vrel - Relative Luminous Intensity Pure Green 1 0.1 0.01 1 95 9998 10 I F - Forward Current ( mA ) 100 Figure 22. Relative Luminous Intensity vs. Forward Current 1.2 I Vrel - Relative Luminous Intensity 1.0 0.8 0.6 0.4 0.2 0 500 Pure Green 520 540 560 580 600 95 10325 - Wavelength ( nm ) Figure 23. Relative Intensity vs. Wavelength Document Number 83010 Rev. 1.9, 31-Aug-04 www.vishay.com 7 TLHE / G / K / P510. Vishay Semiconductors Package Dimensions in mm VISHAY 9612121 www.vishay.com 8 Document Number 83010 Rev. 1.9, 31-Aug-04 VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to TLHE / G / K / P510. Vishay Semiconductors 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83010 Rev. 1.9, 31-Aug-04 www.vishay.com 9 |
Price & Availability of TLHG510
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |